smd type transistors 1 www.kexin.com.cn 1.27 +0.1 -0.1 1.27 +0.1 -0.1 1.27 +0.1 -0.1 5.08 +0.1 -0.1 5.60 0.1max 8.7 +0.2 -0.2 5.28 +0.2 -0.2 2.54 +0.2 -0.2 2.54 15.25 +0.2 -0.2 4.57 +0.2 -0.2 0.4 +0.2 -0.2 2.54 +0.2 -0.2 0.81 +0.1 -0.1 to - 263 unit: mm switching applications 2SD2198 features surface mount type device making the following possible. low collector-to-emitter saturation voltage. 1:base 2 : collector 3 : emitter absolute maximum ratings ta = 25 parameter symbol rating unit collector-base voltage v cbo 60 v collector-emitter voltage v ceo 50 v emitter-base voltage v ebo 6v collector current i c 5a collector current (pulse) i cp 9a collector dissipation 1.65 w t c =25 30 w jumction temperature t j 150 storage temperature t stg -55 to +150 p c
2 smd type transistors www.kexin.com.cn electrical characteristics ta = 25 parameter symbol testconditons min typ max unit collector cutoff current ic bo v cb = 40v , i e =0 0.1 ma emitter cutoff current i ebo v eb =4v,i c =0 0.1 ma v ce =2v,i c = 1a 70 280 v ce =2v,i c =3a 30 gain bandwidth product f t v ce =5v,i c =1a 30 mhz output capacitance c ob v cb = 10v , f = 1mhz 100 pf collector-emitter saturation voltage v ce(sat) i c =3a,i b = 0.3a 0.4 v collector-to-base breakdown voltage v (br)cbo i c =1ma,i e =0 60 v collector-to-emitter breakdown voltage v (br)ceo i c =1ma,r be = 50 v emitter-base breakdown voltage v (br)ebo i e =1ma,i c =0 6 v turn-on time t on 0.1 s storage time t stg 1.4 s fall time t f 0.2 s dc current gain h fe h fe classification rank q r s hfe 70 140 100 200 140 280 2SD2198
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